EL
Detection principle
· After applying a voltage to the solar cell/module to make it emit light, a near-infrared camera is used to capture its light-emitting image, because the brightness of electroluminescence is proportional to the minority carrier diffusion length
· The defect emits weak light due to its low minority carrier diffusion length, resulting in a darker image
Schematic Diagram

Device parameters
| Project | Specification | 
| Model Specifications | EL140S-M  | 
| Effective test area | 170mm X 170m  | 
| Resolution | 1.4 million pixels  | 
Sensitivity  | Can detect defects with contrast >5  | 
Testing time  | 0.6s—10s free setting  | 
Test method  | Probe Contact | 
Power parameters  | Single-phase 220V 10A, maximum load voltage 60V, maximum load current 10A  | 
| Configuration | Test machine (including infrared imager), computer, professional software |